SiC Schottky Diodes
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VS-3C10ET12T-M3
| Manufacturer | Vishay |
|---|---|
| Product Type | SiC Schottky Barrier Diode |
| Package | TO-220AC 2L |
| Mounting | Through hole |
| Reverse voltage | 1200 V VR |
| Continuous forward current | 10 A IF (case-temperature rating; see datasheet) |
| Forward voltage, typical | 1.35 V at IF = 10 A; datasheet temperature and pulse conditions apply |
| Circuit configuration | Single diode |
| Maximum junction temperature | +175 °C |
VS-3C10ET12T-M3 is a Vishay SiC Schottky Barrier Diode in the TO-220AC 2L package. Its reverse-voltage rating is 1200 V. Forward current: 10 A IF (case-temperature rating; see datasheet). Compare the exact datasheet thermal limits, pin assignment and test conditions before selection.
The image shows the corresponding generic package appearance. Check the orderable package outline for exact dimensions and lead forming. Browse SiC Schottky Diodes or send this complete part number, quantity and project requirements to ApexComponent for an RFQ. Price, availability and lead time are confirmed on inquiry.
Product Specifications
| Package | TO-220AC 2L |
|---|---|
| Product Type | SiC Schottky Barrier Diode |
| Voltage Rating | 1200 V VR |
| Current Rating / RDS(on) | 10 A IF (case-temperature rating; see datasheet); Single diode |
| Temperature | Junction max. +175 °C |
| Mounting Type | through-hole |
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