SiC Schottky Diodes
Showing 97–100 of 100 results
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SiC Schottky Diodes
VS-4C30ET07T-M3
Manufacturer Vishay Product Type SiC Schottky Barrier Diode Package TO-220AC 2L Mounting Through hole Reverse voltage 650 V VR Continuous forward current 30 A IF (case-temperature rating; see datasheet) Forward voltage, typical 1.33 V at IF = 30 A; datasheet temperature and pulse conditions apply Circuit configuration Single diode Maximum junction temperature +175 °C SKU: APX-DISC-VS4C30ET07TM3-7791 -
SiC Schottky Diodes
VS-4C30ET07THM3
Manufacturer Vishay Product Type SiC Schottky Barrier Diode Package TO-220AC 2L Mounting Through hole Reverse voltage 650 V VR Continuous forward current 30 A IF (case-temperature rating; see datasheet) Forward voltage, typical 1.33 V at IF = 30 A; datasheet temperature and pulse conditions apply Circuit configuration Single diode Maximum junction temperature +175 °C SKU: APX-DISC-VS4C30ET07THM3-7792 -
SiC Schottky Diodes
VS-4C30ET12T-M3
Manufacturer Vishay Product Type SiC Schottky Barrier Diode Package TO-220AC 2L Mounting Through hole Reverse voltage 1200 V VR Continuous forward current 30 A IF (case-temperature rating; see datasheet) Forward voltage, typical 1.36 V at IF = 30 A; datasheet temperature and pulse conditions apply Circuit configuration Single diode Maximum junction temperature +175 °C SKU: APX-DISC-VS4C30ET12TM3-7793 -
SiC Schottky Diodes
VS-4C30ET12THM3
Manufacturer Vishay Product Type SiC Schottky Barrier Diode Package TO-220AC 2L Mounting Through hole Reverse voltage 1200 V VR Continuous forward current 30 A IF (case-temperature rating; see datasheet) Forward voltage, typical 1.36 V at IF = 30 A; datasheet temperature and pulse conditions apply Circuit configuration Single diode Maximum junction temperature +175 °C SKU: APX-DISC-VS4C30ET12THM3-7794
