SCT4018KRC15


Manufacturer ROHM Semiconductor
Product Type N-channel SiC MOSFET
Package TO-247-4L
Mounting Through hole
Drain-source voltage 1200 V VDS
Continuous drain current 81 A ID (case-temperature rating; see datasheet)
RDS(on), typical 18 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 42 A (see datasheet)
Circuit configuration Single N-channel MOSFET
Maximum junction temperature +175 °C

SCT4018KRC15 Datasheet

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SCT4018KRC15 is a ROHM Semiconductor N-channel SiC MOSFET in the TO-247-4L package. Its drain-source rating is 1200 V. Drain current: 81 A ID (case-temperature rating; see datasheet). Typical RDS(on): 18 mΩ. Typical at Tj = 25 °C; VGS = 18 V; ID = 42 A (see datasheet). Compare the exact datasheet thermal limits, pin assignment and test conditions before selection.

The image shows the corresponding generic package appearance. Check the orderable package outline for exact dimensions and lead forming. Browse SiC MOSFETs or send this complete part number, quantity and project requirements to ApexComponent for an RFQ. Price, availability and lead time are confirmed on inquiry.

SKU: APX-DISC-SCT4018KRC15-7607 Category: Tags: , , Brand:

Product Specifications

Package

TO-247-4L

Product Type

N-channel SiC MOSFET

Voltage Rating

1200 V VDS

Current Rating / RDS(on)

ID 81 A; RDS(on) typ. 18 mΩ

Temperature

Junction max. +175 °C

Mounting Type

through-hole