SiC MOSFETs
Showing 1–24 of 103 results
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SiC MOSFETs
SCT2120AFC
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-220AB (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 29 A ID (case-temperature rating; see datasheet) RDS(on), typical 120 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT2120AFC-7595 -
SiC MOSFETs
SCT3030ARC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 70 A ID (case-temperature rating; see datasheet) RDS(on), typical 30 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 27 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3030ARC15-7596 -
SiC MOSFETs
SCT3030ARHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 70 A ID (case-temperature rating; see datasheet) RDS(on), typical 30 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 27 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3030ARHRC15-7597 -
SiC MOSFETs
SCT3040KRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 55 A ID (case-temperature rating; see datasheet) RDS(on), typical 40 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 20 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3040KRC15-7598 -
SiC MOSFETs
SCT3060ARC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 39 A ID (case-temperature rating; see datasheet) RDS(on), typical 60 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 13 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3060ARC15-7599 -
SiC MOSFETs
SCT3060ARHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 39 A ID (case-temperature rating; see datasheet) RDS(on), typical 60 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 13 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3060ARHRC15-7600 -
SiC MOSFETs
SCT3080ARC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 30 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3080ARC15-7601 -
SiC MOSFETs
SCT3080KRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 31 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3080KRC15-7602 -
SiC MOSFETs
SCT3080KRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 31 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3080KRHRC15-7603 -
SiC MOSFETs
SCT3105KRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 24 A ID (case-temperature rating; see datasheet) RDS(on), typical 105 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 7.6 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3105KRC15-7604 -
SiC MOSFETs
SCT3105KRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 24 A ID (case-temperature rating; see datasheet) RDS(on), typical 105 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 7.6 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3105KRHRC15-7605 -
SiC MOSFETs
SCT4013DRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 105 A ID (case-temperature rating; see datasheet) RDS(on), typical 13 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 58 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4013DRC15-7606 -
SiC MOSFETs
SCT4018KRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 81 A ID (case-temperature rating; see datasheet) RDS(on), typical 18 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 42 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4018KRC15-7607 -
SiC MOSFETs
SCT4026DRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 56 A ID (case-temperature rating; see datasheet) RDS(on), typical 26 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 29 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4026DRC15-7608 -
SiC MOSFETs
SCT4026DRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 56 A ID (case-temperature rating; see datasheet) RDS(on), typical 26 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 29 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4026DRHRC15-7609 -
SiC MOSFETs
SCT4036DRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 42 A ID (case-temperature rating; see datasheet) RDS(on), typical 36 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 21 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4036DRHRC15-7610 -
SiC MOSFETs
SCT4036KRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 43 A ID (case-temperature rating; see datasheet) RDS(on), typical 36 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 21 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4036KRC15-7611 -
SiC MOSFETs
SCT4036KRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 43 A ID (case-temperature rating; see datasheet) RDS(on), typical 36 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 21 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4036KRHRC15-7612 -
SiC MOSFETs
SCT4045DRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 34 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 17 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4045DRC15-7613 -
SiC MOSFETs
SCT4045DRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 34 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 17 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4045DRHRC15-7614 -
SiC MOSFETs
SCT4050KRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 32 A ID (case-temperature rating; see datasheet) RDS(on), typical 50 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 15 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4050KRHRC15-7615 -
SiC MOSFETs
SCT4062KRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 26 A ID (case-temperature rating; see datasheet) RDS(on), typical 62 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 12 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4062KRC15-7616 -
SiC MOSFETs
SCT4062KRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 26 A ID (case-temperature rating; see datasheet) RDS(on), typical 62 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 12 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4062KRHRC15-7617 -
SiC MOSFETs
SCT4065DRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 25 A ID (case-temperature rating; see datasheet) RDS(on), typical 65 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 12 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4065DRHRC15-7618
