SiC MOSFETs
Showing 49–72 of 103 results
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SiC MOSFETs
SCT3120ALGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 21 A ID (case-temperature rating; see datasheet) RDS(on), typical 120 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 6.7 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3120ALGC11-7643 -
SiC MOSFETs
SCT3120ALHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 21 A ID (case-temperature rating; see datasheet) RDS(on), typical 120 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 6.7 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3120ALHRC11-7644 -
SiC MOSFETs
SCT3160KLGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 17 A ID (case-temperature rating; see datasheet) RDS(on), typical 160 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 5 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3160KLGC11-7645 -
SiC MOSFETs
SCT3160KLHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 17 A ID (case-temperature rating; see datasheet) RDS(on), typical 160 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 5 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3160KLHRC11-7646 -
SiC MOSFETs
SCT4013DEC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 105 A ID (case-temperature rating; see datasheet) RDS(on), typical 13 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 58 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4013DEC11-7647 -
SiC MOSFETs
SCT4018KEC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 81 A ID (case-temperature rating; see datasheet) RDS(on), typical 18 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 42 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4018KEC11-7648 -
SiC MOSFETs
SCT4026DEC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 56 A ID (case-temperature rating; see datasheet) RDS(on), typical 26 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 29 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4026DEC11-7649 -
SiC MOSFETs
SCT4026DEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 56 A ID (case-temperature rating; see datasheet) RDS(on), typical 26 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 29 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4026DEHRC11-7650 -
SiC MOSFETs
SCT4036DEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 42 A ID (case-temperature rating; see datasheet) RDS(on), typical 36 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 21 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4036DEHRC11-7651 -
SiC MOSFETs
SCT4036KEC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 43 A ID (case-temperature rating; see datasheet) RDS(on), typical 36 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 21 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4036KEC11-7652 -
SiC MOSFETs
SCT4036KEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 43 A ID (case-temperature rating; see datasheet) RDS(on), typical 36 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 21 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4036KEHRC11-7653 -
SiC MOSFETs
SCT4045DEC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 34 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 17 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4045DEC11-7654 -
SiC MOSFETs
SCT4045DEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 34 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 17 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4045DEHRC11-7655 -
SiC MOSFETs
SCT4050KEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 32 A ID (case-temperature rating; see datasheet) RDS(on), typical 50 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 15 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4050KEHRC11-7656 -
SiC MOSFETs
SCT4062KEC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 26 A ID (case-temperature rating; see datasheet) RDS(on), typical 62 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 12 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4062KEC11-7657 -
SiC MOSFETs
SCT4062KEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 26 A ID (case-temperature rating; see datasheet) RDS(on), typical 62 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 12 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4062KEHRC11-7658 -
SiC MOSFETs
SCT4065DEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 25 A ID (case-temperature rating; see datasheet) RDS(on), typical 65 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 12 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4065DEHRC11-7659 -
SiC MOSFETs
SCT4090KEC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 19 A ID (case-temperature rating; see datasheet) RDS(on), typical 90 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 8.3 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4090KEC11-7660 -
SiC MOSFETs
SCT4090KEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 19 A ID (case-temperature rating; see datasheet) RDS(on), typical 90 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 8.3 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4090KEHRC11-7661 -
SiC MOSFETs
SCT3030AW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 650 V VDS Continuous drain current 70 A ID (case-temperature rating; see datasheet) RDS(on), typical 30 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 27 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3030AW7TL-7662 -
SiC MOSFETs
SCT3080AW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 650 V VDS Continuous drain current 29 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3080AW7TL-7663 -
SiC MOSFETs
SCT3080KW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 30 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3080KW7TL-7664 -
SiC MOSFETs
SCT3105KW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 23 A ID (case-temperature rating; see datasheet) RDS(on), typical 105 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 7.6 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3105KW7TL-7665 -
SiC MOSFETs
SCT3160KW7HRTL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 17 A ID (case-temperature rating; see datasheet) RDS(on), typical 160 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 5 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3160KW7HRTL-7666
