SiC MOSFETs
Showing 25–48 of 103 results
-
SiC MOSFETs
SCT4090KRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 19 A ID (case-temperature rating; see datasheet) RDS(on), typical 90 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 8.3 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4090KRC15-7619 -
SiC MOSFETs
SCT4090KRHRC15
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247-4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 19 A ID (case-temperature rating; see datasheet) RDS(on), typical 90 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 8.3 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4090KRHRC15-7620 -
SiC MOSFETs
SCT2080KEGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 40 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT2080KEGC11-7621 -
SiC MOSFETs
SCT2080KEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 40 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT2080KEHRC11-7622 -
SiC MOSFETs
SCT2160KEGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 22 A ID (case-temperature rating; see datasheet) RDS(on), typical 160 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 7 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT2160KEGC11-7623 -
SiC MOSFETs
SCT2280KEGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 14 A ID (case-temperature rating; see datasheet) RDS(on), typical 280 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 4 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT2280KEGC11-7624 -
SiC MOSFETs
SCT2280KEHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 14 A ID (case-temperature rating; see datasheet) RDS(on), typical 280 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 4 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT2280KEHRC11-7625 -
SiC MOSFETs
SCT2450KEGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 10 A ID (case-temperature rating; see datasheet) RDS(on), typical 450 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 3 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT2450KEGC11-7626 -
SiC MOSFETs
SCT3017ALGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 118 A ID (case-temperature rating; see datasheet) RDS(on), typical 17 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 47 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3017ALGC11-7627 -
SiC MOSFETs
SCT3017ALHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 118 A ID (case-temperature rating; see datasheet) RDS(on), typical 17 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 47 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3017ALHRC11-7628 -
SiC MOSFETs
SCT3022ALGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 93 A ID (case-temperature rating; see datasheet) RDS(on), typical 22 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 36 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3022ALGC11-7629 -
SiC MOSFETs
SCT3022ALHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 93 A ID (case-temperature rating; see datasheet) RDS(on), typical 22 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 36 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3022ALHRC11-7630 -
SiC MOSFETs
SCT3022KLGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 95 A ID (case-temperature rating; see datasheet) RDS(on), typical 22 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 36 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3022KLGC11-7631 -
SiC MOSFETs
SCT3030ALGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 70 A ID (case-temperature rating; see datasheet) RDS(on), typical 30 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 27 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3030ALGC11-7632 -
SiC MOSFETs
SCT3030ALHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 70 A ID (case-temperature rating; see datasheet) RDS(on), typical 30 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 27 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3030ALHRC11-7633 -
SiC MOSFETs
SCT3030KLGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 72 A ID (case-temperature rating; see datasheet) RDS(on), typical 30 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 27 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3030KLGC11-7634 -
SiC MOSFETs
SCT3040KLGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 55 A ID (case-temperature rating; see datasheet) RDS(on), typical 40 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 20 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3040KLGC11-7635 -
SiC MOSFETs
SCT3040KLHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 55 A ID (case-temperature rating; see datasheet) RDS(on), typical 40 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 20 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3040KLHRC11-7636 -
SiC MOSFETs
SCT3060ALGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 39 A ID (case-temperature rating; see datasheet) RDS(on), typical 60 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 13 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3060ALGC11-7637 -
SiC MOSFETs
SCT3060ALHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 39 A ID (case-temperature rating; see datasheet) RDS(on), typical 60 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 13 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3060ALHRC11-7638 -
SiC MOSFETs
SCT3080ALGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 650 V VDS Continuous drain current 30 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3080ALGC11-7639 -
SiC MOSFETs
SCT3080KLGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 31 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3080KLGC11-7640 -
SiC MOSFETs
SCT3080KLHRC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 31 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3080KLHRC11-7641 -
SiC MOSFETs
SCT3105KLGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 24 A ID (case-temperature rating; see datasheet) RDS(on), typical 105 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 7.6 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3105KLGC11-7642
