SCT2120AFC
| Manufacturer | ROHM Semiconductor |
|---|---|
| Product Type | N-channel SiC MOSFET |
| Package | TO-220AB (3 leads) |
| Mounting | Through hole |
| Drain-source voltage | 650 V VDS |
| Continuous drain current | 29 A ID (case-temperature rating; see datasheet) |
| RDS(on), typical | 120 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) |
| Circuit configuration | Single N-channel MOSFET |
| Maximum junction temperature | +175 °C |
SCT2120AFC is a ROHM Semiconductor N-channel SiC MOSFET in the TO-220AB (3 leads) package. Its drain-source rating is 650 V. Drain current: 29 A ID (case-temperature rating; see datasheet). Typical RDS(on): 120 mΩ. Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet). Compare the exact datasheet thermal limits, pin assignment and test conditions before selection.
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Product Specifications
| Package | TO-220AB (3 leads) |
|---|---|
| Product Type | N-channel SiC MOSFET |
| Voltage Rating | 650 V VDS |
| Current Rating / RDS(on) | ID 29 A; RDS(on) typ. 120 mΩ |
| Temperature | Junction max. +175 °C |
| Mounting Type | through-hole |
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