MXP120A250SE-T1GE3
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SiC MOSFETs
MXP120A250SE-T1GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package D2PAK 7L (TO-263 7L) Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 12 A ID (case-temperature rating; see datasheet) RDS(on), typical 250 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A250SET1GE3-7680
