SCT2080KEGC11
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SiC MOSFETs
SCT2080KEGC11
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-247N (3 leads) Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 40 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 10 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT2080KEGC11-7621
