SCT3160KW7HRTL
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SiC MOSFETs
SCT3160KW7HRTL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 17 A ID (case-temperature rating; see datasheet) RDS(on), typical 160 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 5 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3160KW7HRTL-7666
