TO-247-4L / TO-247AD 4L; 4 leads; unmarked package appearance

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MXPQ120A080SL-GE3

Manufacturer Vishay
Product Type N-channel SiC MOSFET
Package TO-247AD 4L
Mounting Through hole
Drain-source voltage 1200 V VDS
Continuous drain current 31 A ID (case-temperature rating; see datasheet)
RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions
Circuit configuration Single N-channel MOSFET
Maximum junction temperature +175 °C

MXPQ120A080SL-GE3 Datasheet

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MXPQ120A080SL-GE3 is a Vishay N-channel SiC MOSFET in the TO-247AD 4L package. Its drain-source rating is 1200 V. Drain current: 31 A ID (case-temperature rating; see datasheet). Typical RDS(on): 80 mΩ. Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions. Compare the exact datasheet thermal limits, pin assignment and test conditions before selection.

The image shows the corresponding generic package appearance. Check the orderable package outline for exact dimensions and lead forming. Browse SiC MOSFETs or send this complete part number, quantity and project requirements to ApexComponent for an RFQ. Price, availability and lead time are confirmed on inquiry.

SKU: APX-DISC-MXPQ120A080SLGE3-7694 Category: Tags: , , Brand:

Product Specifications

Package

TO-247AD 4L
Product Type

N-channel SiC MOSFET
Voltage Rating

1200 V VDS
Current Rating / RDS(on)

ID 31 A; RDS(on) typ. 80 mΩ
Temperature

Junction max. +175 °C
Mounting Type

through-hole

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