N-channel SiC MOSFET
Showing 73–96 of 100 results
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SiC MOSFETs
SCT3160KW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 17 A ID (case-temperature rating; see datasheet) RDS(on), typical 160 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 5 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT3160KW7TL-7667 -
SiC MOSFETs
SCT4013DW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 750 V VDS Continuous drain current 98 A ID (case-temperature rating; see datasheet) RDS(on), typical 13 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 58 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4013DW7TL-7668 -
SiC MOSFETs
SCT4018KW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 75 A ID (case-temperature rating; see datasheet) RDS(on), typical 18 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 42 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4018KW7TL-7669 -
SiC MOSFETs
SCT4026DW7HRTL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 750 V VDS Continuous drain current 51 A ID (case-temperature rating; see datasheet) RDS(on), typical 26 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 29 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4026DW7HRTL-7670 -
SiC MOSFETs
SCT4026DW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 750 V VDS Continuous drain current 51 A ID (case-temperature rating; see datasheet) RDS(on), typical 26 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 29 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4026DW7TL-7671 -
SiC MOSFETs
SCT4045DW7HRTL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 750 V VDS Continuous drain current 31 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 17 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4045DW7HRTL-7672 -
SiC MOSFETs
SCT4045DW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 750 V VDS Continuous drain current 31 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 17 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4045DW7TL-7673 -
SiC MOSFETs
SCT4062KW7HRTL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 24 A ID (case-temperature rating; see datasheet) RDS(on), typical 62 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 12 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4062KW7HRTL-7674 -
SiC MOSFETs
SCT4062KW7TL
Manufacturer ROHM Semiconductor Product Type N-channel SiC MOSFET Package TO-263-7L Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 24 A ID (case-temperature rating; see datasheet) RDS(on), typical 62 mΩ; Typical at Tj = 25 °C; VGS = 18 V; ID = 12 A (see datasheet) Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-SCT4062KW7TL-7675 -
SiC MOSFETs
MXP120A045SE-T1GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package D2PAK 7L (TO-263 7L) Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 52 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A045SET1GE3-7676 -
SiC MOSFETs
MXP120A063SE-T1GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package D2PAK 7L (TO-263 7L) Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 41 A ID (case-temperature rating; see datasheet) RDS(on), typical 63 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A063SET1GE3-7677 -
SiC MOSFETs
MXP120A080SE-T1GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package D2PAK 7L (TO-263 7L) Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 32 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A080SET1GE3-7678 -
SiC MOSFETs
MXP120A160SE-T1GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package D2PAK 7L (TO-263 7L) Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 18 A ID (case-temperature rating; see datasheet) RDS(on), typical 160 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A160SET1GE3-7679 -
SiC MOSFETs
MXP120A250SE-T1GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package D2PAK 7L (TO-263 7L) Mounting Surface mount Drain-source voltage 1200 V VDS Continuous drain current 12 A ID (case-temperature rating; see datasheet) RDS(on), typical 250 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A250SET1GE3-7680 -
SiC MOSFETs
MXP170A770SE-T1GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package D2PAK 7L (TO-263 7L) Mounting Surface mount Drain-source voltage 1700 V VDS Continuous drain current 5.5 A ID (case-temperature rating; see datasheet) RDS(on), typical 770 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP170A770SET1GE3-7681 -
SiC MOSFETs
MXP120A045SW-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 3L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 51 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A045SWGE3-7682 -
SiC MOSFETs
MXP120C040W-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 3L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 53 A ID (case-temperature rating; see datasheet) RDS(on), typical 40 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120C040WGE3-7683 -
SiC MOSFETs
MXPQ120A045SW-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 3L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 51 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXPQ120A045SWGE3-7684 -
SiC MOSFETs
MXPQ120C040W-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 3L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 53 A ID (case-temperature rating; see datasheet) RDS(on), typical 40 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXPQ120C040WGE3-7685 -
SiC MOSFETs
MXP075A040SL-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 4L Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 51 A ID (case-temperature rating; see datasheet) RDS(on), typical 40 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP075A040SLGE3-7686 -
SiC MOSFETs
MXP120A045SL-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 51 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A045SLGE3-7687 -
SiC MOSFETs
MXP120A063SL-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 39 A ID (case-temperature rating; see datasheet) RDS(on), typical 63 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A063SLGE3-7688 -
SiC MOSFETs
MXP120A080SL-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 31 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A080SLGE3-7689 -
SiC MOSFETs
MXP120A160SL-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 18 A ID (case-temperature rating; see datasheet) RDS(on), typical 160 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXP120A160SLGE3-7690
