N-channel SiC MOSFET
Showing 97–100 of 100 results
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SiC MOSFETs
MXPQ075A040SL-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 4L Mounting Through hole Drain-source voltage 750 V VDS Continuous drain current 51 A ID (case-temperature rating; see datasheet) RDS(on), typical 40 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXPQ075A040SLGE3-7691 -
SiC MOSFETs
MXPQ120A045SL-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 51 A ID (case-temperature rating; see datasheet) RDS(on), typical 45 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXPQ120A045SLGE3-7692 -
SiC MOSFETs
MXPQ120A063SL-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 39 A ID (case-temperature rating; see datasheet) RDS(on), typical 63 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXPQ120A063SLGE3-7693 -
SiC MOSFETs
MXPQ120A080SL-GE3
Manufacturer Vishay Product Type N-channel SiC MOSFET Package TO-247AD 4L Mounting Through hole Drain-source voltage 1200 V VDS Continuous drain current 31 A ID (case-temperature rating; see datasheet) RDS(on), typical 80 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions Circuit configuration Single N-channel MOSFET Maximum junction temperature +175 °C SKU: APX-DISC-MXPQ120A080SLGE3-7694
