MXPQ120A045SL-GE3
| Manufacturer | Vishay |
|---|---|
| Product Type | N-channel SiC MOSFET |
| Package | TO-247AD 4L |
| Mounting | Through hole |
| Drain-source voltage | 1200 V VDS |
| Continuous drain current | 51 A ID (case-temperature rating; see datasheet) |
| RDS(on), typical | 45 mΩ; Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions |
| Circuit configuration | Single N-channel MOSFET |
| Maximum junction temperature | +175 °C |
MXPQ120A045SL-GE3 is a Vishay N-channel SiC MOSFET in the TO-247AD 4L package. Its drain-source rating is 1200 V. Drain current: 51 A ID (case-temperature rating; see datasheet). Typical RDS(on): 45 mΩ. Typical at Tj = 25 °C; use datasheet gate-bias and test-current conditions. Compare the exact datasheet thermal limits, pin assignment and test conditions before selection.
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Product Specifications
| Package | TO-247AD 4L |
|---|---|
| Product Type | N-channel SiC MOSFET |
| Voltage Rating | 1200 V VDS |
| Current Rating / RDS(on) | ID 51 A; RDS(on) typ. 45 mΩ |
| Temperature | Junction max. +175 °C |
| Mounting Type | through-hole |
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